采用第6代IGBT硅片技术,损耗低二极管采用第6代LPT硅片技术,正向导通压降低硅片结温可高达175°C 硅片运行温度最高可达150°C 内部集成NTC测温电阻全系列共享同一封装平台有条件接受客户定制
产品型号 参数说明
CM35MXA-24S CIB,35A/1200V
CM50MXA-24S CIB,50A/1200V
CM75MXA-24S CIB,75A/1200V
CM100MXA-24S CIB,100A/1200V
CM75RX-24S 7单元,75A/1200V
CM100RX-24S 7单元,100A/1200V
CM150RX-24S 7单元,150A/1200V
CM75TX-24S 6单元,75A/1200V
CM100TX-24S 6单元,100A/1200V
CM150TX-24S 6单元,150A/1200V
CM150DX-24S 2单元,150A/1200V
CM200DX-24S 2单元,200A/1200V
CM300DX-24S 2单元,300A/1200V
CM450DX-24S 2单元,450A/1200V
CM600DXL-24S 2单元,600A/1200V
CM1000DXL-24S 2单元,1000A/1200V
CM50RX-34S 7单元,50A/1700V
CM75RX-34S 7单元,75A/1700V
CM50TX-34S 6单元,50A/1700V
CM75TX-34S 6单元,75A/1700V
CM100TX-34S 6单元,100A/1700V
CM150DX-34S 2单元,150A/1700V
CM200DX-34S 2单元,200A/1700V
CM300DX-34S 2单元,300A/1700V
CM400DXL-34S 2单元,400A/1700V
CM600DXL-34S 2单元,600A/1700V